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512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
Features
Mobile LPSDR SDRAM
MT48H32M16LF – 8 Meg x 16 x 4 Banks
MT48H16M32LF/LG – 4 Meg x 32 x 4 Banks
Features
? V DD /V DDQ = 1.7–1.95V
? Fully synchronous; all signals registered on positive
edge of system clock
? Internal, pipelined operation; column address can
be changed every clock cycle
? Four internal banks for concurrent operation
? Programmable burst lengths: 1, 2, 4, 8, and continu-
ous
? Auto precharge, includes concurrent auto precharge
? Auto refresh and self refresh modes
? LVTTL-compatible inputs and outputs
? On-chip temperature sensor to control self refresh
rate
? Partial-array self refresh (PASR)
? Deep power-down (DPD)
? Selectable output drive strength (DS)
? 64ms refresh period; 32ms for automotive tempera-
ture
Options
? V DD /V DDQ : 1.8V/1.8V
? Addressing
– Standard addressing option
– Reduced page size option 1
? Configuration
– 32 Meg x 16 (8 Meg x 16 x 4
banks)
– 16 Meg x 32 (4 Meg x 32 x 4
banks)
? Plastic “green” packages
– 54-ball VFBGA (8mm x 8mm) 2
– 90-ball VFBGA (8mm x 13mm) 3
? Timing – cycle time
– 6ns at CL = 3
– 7.5ns at CL = 3
? Power
– Standard I DD2 /I DD7
– Low-power I DD2 /I DD71
? Operating temperature range
– Commercial (0?C to +70?C)
– Industrial (–40?C to +85?C)
– Automotive (–40?C to +105?C)
? Revision
Marking
H
LF
LG
32M16
16M32
B4
B5
-6
-75
None
L
None
IT
AT
:C
Notes:
1. Contact factory for availability.
2. Available only for x16 configuration.
3. Available only for x32 configuration.
Table 1: Configuration Addressing
16 Meg x 32 Reduced
Architecture
Number of banks
Bank address balls
Row address balls
Column address balls
32 Meg x 16
4
BA0, BA1
A[12:0]
A[9:0]
16 Meg x 32
4
BA0, BA1
A[12:0]
A[8:0]
Page Size Option 1
4
BA0, BA1
A[13:0]
A[7:0]
Note:
1. Contact factory for availability.
1
PDF: 09005aef8459c827 Micron Technology, Inc. reserves the right to change products or specifications without notice.
512mb_mobile_sdram_y67m_at.pdf – Rev. B 3/11 EN ? 2011 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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